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研究生中文姓名:連彥凱
研究生英文姓名:Lien, Yan-Kai
中文論文名稱:32X32紅外光感測元件先進製程研究
英文論文名稱:Research on Advanced Process of 32X32 Infrared Detector Array
指導教授姓名:張忠誠
陳洋元
口試委員中文姓名:教授︰張忠誠
教授︰陳洋元
教授︰鄭岫盈
副教授︰黃嘉宏
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:電機工程學系
學號:10453083
請選擇論文為:應用型
畢業年度:108
畢業學年度:107
學期:
語文別:中文
論文頁數:66
中文關鍵詞:紅外線感測元件聚醯亞胺微橋結構電子束微影圓形柱狀
英文關鍵字:infraredpolyimidemircobolometerelectron beam lithographycircular column
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本論文利用微機電製程技術來製作微橋結構的紅外線感測器,並利用光學諧振腔結構之目的來減少元件的熱傳導及增強對特定波長之紅外線吸收。
在主要感測層材料上使用釕鋁氧化物(Ruthenium Aluminum Oxide),利用其高電阻溫度係數( Temperature Coefficient of Resistance ) 簡稱TCR來製作感測層濺鍍靶材,並使用聚醯亞胺(Polyimide)來當作犧牲層之材料具有良好的相容性及耐高溫之特性。
由於本團隊先前使用黃光微影製程,在線寬、結構精度及平均電阻上皆有達不到設計要求之問題導致最後測試結果不如預期,為此本論文重點將著重於使用電子束微影來改善黃光微影在線寬及精度不足之問題,藉此減少平均電阻誤差,並製作符合市面主要規格25μm x 25μm之元件,亦與讀取電路做結合。由於本團隊先前製作方形柱狀時在掀離(lift off)時會造成部分薄膜破損,影響元件良率,本論文亦設計柱狀電極改為圓形柱狀有效改善薄膜破損及連接電極接觸之問題。

In this thesis, micro-electromechanical process technology is used to fabricate the micro-bridge structure of the infrared sensor, and the purpose of the optical cavity structure is to reduce the heat conduction of the component and enhance the infrared absorption of a specific wavelength.Ruthenium Aluminum Oxide is used on the main sensing layer material, to fabricate the sensing layer. The polymide which has good compatibility and high temperature resistance used as the sacrificial layer.
Due to the previous our team had problems on width, structural accuracy and average resistance fabricated of sensors that have not met the design requirements, resulting in the final test results are not as expected. For this reason, in this thesis we focus on the use of electron beam lithography to improve device structure. The problem of insufficient line width and accuracy of sensors are reduced, the average resistance error is reduced also. In addition since the team used to make a square column shape electrodes for sensors before , it cause partial film damage during lift off process, which will affect the component yield. This paper change the columnar electrode to be circular column shape to effectively improve the problem in film damage and connect the electrode contact.

目錄

Chapter 1 緒論 1
1-1研究背景與動機 1
1-2 紅外線 2
1-3紅外線感測器 2
1-4論文概述 3
Chapter 2 物理特性及理論 4
2-1黑體輻射 4
2-1-1 Planck定律 4
2-1-2 Stefan-Boltzmann 定律 4
2-1-3 Wien 位移定律 5
2-2 熱敏元件之原理 5
2-2-1 電阻溫度係數 5
2-2-2 響應度 6
2-2-3 薄膜電阻 6
2-2-4 雜訊等效功率NEP 7
2-2.5 感測度 7
2-2-6 歸一化感測度 7
2-2-7 熱容 8
2-2-8熱傳導率 8
Chapter 3紅外線感測元件製程介紹 10
3-1製程相關儀器介紹 10
3-1-1 基板的選擇與清洗 10
3-1-2 光罩設計 10
3-1-3 黃光微影製程 11
3-1-4電子束微影製程 11
3-1-5熱蒸鍍系統 12
3-1-6射頻磁控濺鍍系統 12
3-1-7反應式離子蝕刻機 13
3-1-8鑽石切割機 13
3-1-9KEITHLEY 2400 多功能電源電錶 13
3-1-10 LakeShore 340 Temperature Controller 14
3-1-11鎖相放大器(Lock-in-Amplifier) 14
3-2 製程量測設備 14
3-2-1 掃描式電子顯微鏡(Scanning Electron Microscopy) 14
3-2-2 X-光繞射儀(X-Ray) 14
3-2-3膜厚量測儀(Surface Profiler) 15
3-3 紅外線感測元件製程簡介 15
3-4 元件製程介紹 15
3-4-1 元件製程步驟 17
Chapter 4 實驗結果與討論 22
4-1感測元件OM及SEM量測 22
4-1-1 元件OM量測 22
4-1-2 元件SEM量測 24
4-2 感測器基本參數 25
4-5 紅外線熱影像量測設置 26
4-6 響應時間量測 27
4-5 紅外線熱影像量測 28
Chapter 5 結論 29
參考文獻 30

參考文獻

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